Diffusion furnace is a typical heat treatment equipment in semiconductor processing, used in integrated circuits, discrete devices, solar photovoltaic industry for P doping, B doping, oxidation, alloys, annealing and other processes.

The main purpose of the diffusion process is to dope the semiconductor wafer under high temperature conditions, that is, to diffuse the elemental phosphorus and boron into the silicon wafer, thereby changing and controlling the type, concentration, and distribution of impurities within the semiconductor in order to establish different areas of electrical characteristics.

Silicon carbide cantilever paddles are the key parts for wafer loading system in semiconductor and solar applications. The main specifications of silicon carbide paddles used in photovoltaic and new energy industry are 2378 mm, 2550 mm, 2660 mm, etc., and ceramic paddles are used in polycrystalline silicon or monocrystalline silicon for loading and transfering silicon wafers during silicon wafer (diffusion) coating in a diffusion kiln under high temperature (1000 to 1300℃).

The Sinri cantilever paddles are of reliable performances, no deformation at high temperatures and high wafer loading capacity, and are applicable to robot automatic loading and tranfering systems. The stable and non-deformation sections of silicon carbide cantilever paddles make the manufacturing of larger-size wafers by using the existing furnace tubes possible. The thermal expansion coefficient of Sinri cantilever paddles and LPCVD coating are similar, and with the application to LPCVD, the maintenance and cleaning cycle is greatly extended, and pollutants are significantly reduced.

Characteristics：

1. High purity

2. Good mechanical strength

3. Good thermal shock resistance

4. Good corrosion and wear resistance

5. Long service life & high cost performance

Specifications:

Could process as customers drawing (Max. Length 3500mm)

Applications